发明名称 |
High integration density MOS technology power device structure |
摘要 |
High density MOS technology power device structure, including body regions of a first conductivity type formed in a semiconductor layer of a second conductivity type, wherein the body regions include at least one plurality of substantially rectilinear and substantially parallel body stripes each joined at its ends to adjacent body stripes by junction regions, so that the at least one plurality of body stripes and the junction regions form a continuous, serpentine-shaped body region.
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申请公布号 |
US6492691(B2) |
申请公布日期 |
2002.12.10 |
申请号 |
US19990318693 |
申请日期 |
1999.05.25 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
MAGRI' ANGELO;FRISINA FERRUCCIO |
分类号 |
H01L29/06;H01L29/10;H01L29/423;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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