| 摘要 |
FIELD: micro- and nanoelectronics. SUBSTANCE: method for producing nanostructures on solid body surface involving formation of nanometric-size conductor between two electrodes of structure separated by insulating slit, 2-100 nm wide, includes introduction of organic material in insulating slit, with material conductance varying when electron flux is passed through this slit, application of voltage of sufficient magnitude across structure to ensure current flow, said voltage being supplied from device of high output resistance, and structure holding in energized condition. Novelty is that conductor is produced in two stages: voltage is raised up to abrupt increase or jump of structure conductivity (U0) at maximal output resistances which are still ensuring reliable detection of structure conductivity jump on the background of noise and voltage across energized structure is maintained between 2 V and U0 at low output resistances. In this way nanometric-size conductor is produced in insulating slit between structure electrodes having different characteristics due to its self-organizing process. EFFECT: enhanced reliability and enlarged capabilities of implementing proposed process. 4 cl, 7 dwg |
