发明名称 |
SEMICONDUCTOR MEMORY DEVICE WITH CAPACITORS FORMED ABOVE AND BELOW MEMORY LOCATION TRANSISTOR (ALTERNATIVES) AND ITS MANUFACTURING PROCESS |
摘要 |
FIELD: dynamic random-access memory devices. SUBSTANCE: memory device has first and second transistors formed on first layer; first storage electrode connected to first transistor and made under first layer; and second storage electrode connected to second transistor and made under first layer. First and second storage electrodes are connected to each source through spacer formed on side walls of each source; some spots between storage electrodes and transistors are etched. Proposed design ensures twice as large and still larger memory capacity. EFFECT: enlarged memory capacity, enhanced stability of transistor characteristics, reduced channel contraction effect. 16 cl, 10 dwg |
申请公布号 |
RU2194338(C2) |
申请公布日期 |
2002.12.10 |
申请号 |
RU19950107653 |
申请日期 |
1995.05.12 |
申请人 |
SAMSUNG EHLEKTRONIKS KO., LTD. |
发明人 |
LI DZHOO JANG |
分类号 |
H01L21/02;H01L21/8242;H01L27/06;H01L27/108;H01L27/12;H01L29/786;(IPC1-7):H01L27/108;H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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