| 摘要 |
PURPOSE: A method for fabricating a thin film transistor liquid crystal display device is provided to simplify the deposition steps by forming source/drain electrodes with Mo/Ti metal films instead of Mo/Al/Mo metal films, and remove the profile reject among electrodes by carrying out dry etching instead of wet etching. CONSTITUTION: A method for fabricating a thin film transistor liquid crystal display device includes the steps of depositing a gate insulating film(13), an amorphous silicon film(21) and a doped amorphous silicon film(22) on a glass substrate(10) formed with gate electrodes(11) in sequence, depositing a Ti metal film(24) and a Mo metal film(25a) on the substrate in sequence, doping a photoresist on the Mo metal film and patterning the photoresist film(27) to form source/drain areas by exposing and developing by using a mask, forming source/drain electrodes(24a,25a/24b,25b) by selectively etching the Mo metal film and continuously selectively etching the Ti metal film in a reactive ion chamber, and forming a channel layer by selectively etching the substrate formed with the source/drain electrodes in a plasma chamber.
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