METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

摘要

PURPOSE: A fabrication method of a TFT(Thin Film Transistor) is provided to improve electron mobility by using a concave-convex shaped channel layer. CONSTITUTION: After depositing a gate metal film on a transparent insulating substrate(20), a half-tone photoresist pattern is formed on the gate metal film. A concave-convex shaped gate electrode(21b) is formed by selectively etching the gate metal film using the half-tone photoresist pattern. A gate insulating layer, an amorphous silicon layer and a doped amorphous silicon layer are sequentially deposited and selectively etched, thereby defining an active region. A source and drain electrodes(26a,26b) are formed on the resultant structure. After forming a passivation layer(27) having a contact hole on the resultant structure, a pixel electrode(29) is formed on the passivation layer.