| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which the dual damascene structure, where the advantages of a via-first scheme are made use of, is achieved by effectively using an anti-reflection coating. SOLUTION: First, a resist (not shown) for forming a hole is patterned on an interlayer dielectric 13, and according to it the interlayer dielectric 132, a stopper film 12, and the interlayer dielectric 131 are sequentially etched. The stopper film 11 is left to be finally eliminated. Next, the anti-reflection coating 14 is applied across a wafer. In this case, two kinds of anti-reflection coatings 141, 142 of different viscosities are prepared. In the application of the anti-reflection coating 141, very little coating enters the inside of the hole shape HL but very little coating is reduced at a periphery of the hole shape HL. In the application of the anti-reflection coating 142, not a little coating enters the inside of the hole shape HL to become thick. As a result, the etching accuracy of a wiring groove is improved.
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