发明名称 ELECTRON BEAM LITHOGRAPHIC SYSTEM AND ELECTRON BEAM PLOTTING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an electron beam lithographic system and an electron beam drawing method for solving the spreading (blurring) of electron beams by Coulomb effect, without drastically decreasing the through put. SOLUTION: A diaphragm 106 for adjusting brightness, having a plurality of openings for selecting brightness near a position on an electron beam path where a crossover image is formed, an opening for passing the electron beam is selected, based on signals for adjusting brightness, and thus adjusting the brightness to a desired value. Brightness, corresponding to a beam area, is adjusted for necessarily and fully reducing the brightness, so that the Coulomb effect can be neglected constantly during drawing, thus efficiently reducing the Coulomb's effect, without decreasing the brightness more than necessary also to a beam where the area is small and the Coulomb's effect is small.
申请公布号 JP2002353128(A) 申请公布日期 2002.12.06
申请号 JP20010161658 申请日期 2001.05.30
申请人 HITACHI LTD 发明人 TANIMOTO AKIYOSHI;HAYATA YASUNARI;OTA HIROYA
分类号 G03F7/20;H01J37/09;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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