发明名称 METHOD FOR MEASURING AND CONTROLLING JUNCTION TEMPERATURE OF SEMICONDUCTOR IC
摘要 PURPOSE: A method for measuring and controlling junction temperature of semiconductor IC is provided to achieve improved reliability and accuracy of test data for semiconductor IC by easily and accurately controlling junction temperature through the measurement of turn-on voltage of diode embedded in the semiconductor IC. CONSTITUTION: A method for controlling junction temperature of semiconductor IC, comprises a fist step(61) of loading a semiconductor IC to a test equipment and setting test programs or patterns; a second step(63) of performing a predetermined test on a specific item; a third step(65) of executing test patterns; a fourth step(67) of comparing the junction temperature of semiconductor IC before testing with a target junction temperature; a fifth step(69) of measuring test data if the junction temperature of semiconductor IC before testing is the same with the target junction temperature; and a sixth sep(70) of testing speed characteristics of semiconductor IC. A method for measuring junction temperature of semiconductor IC, comprises a first step of selecting a protection diode embedded in a semiconductor IC; a second step of setting the ambient temperature of the semiconductor IC as a first temperature, at the state where power consumption has not occurred in the semiconductor IC; and a third step of measuring turn-on voltage of the diode at the first temperature.
申请公布号 KR20020091659(A) 申请公布日期 2002.12.06
申请号 KR20010030524 申请日期 2001.05.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YUN GI;YOO, JIN O;YOON, SEONG JUN
分类号 G01K7/01;(IPC1-7):G01K7/01 主分类号 G01K7/01
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