| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having stability and high reliability where disconnection of the polysilicon resistance layer is not caused even if large current such as surge current flows in the polysilicon resistance layer. SOLUTION: In the semiconductor device, which comprises first insulating layers 8, 21 formed on a substrate 1, a resistance layer 20 having a prescribed electric resistance formed on the first insulating layers 8, 21, a second insulating layer 17 formed on the resistance layer 20, and a plurality of wirings 19 that are each electrically connected with the resistance layer 20 at a distant position on the resistance layer 20 via holes 18 each formed in the second insulating layer 17, a heat accumulating layer 5 for accumulating heat to be generated when current flows in the resistance layer 20 is provided in the vicinity of the resistance layer 20.
|
