| 摘要 |
PURPOSE: A method for reworking a bump is provided to increase production and reduce fabrication cost by removing an under bump metal(UBM) layer and a bump on a wafer through a chemical etching method and by forming a new UBM layer and a new bump in a position where the previous UBM layer and bump are removed. CONSTITUTION: A plurality of chips are formed on a wafer(100). A bonding pad(102) is formed in each chip. A passivation layer(104,106) protecting the chip and exposing the bonding pad is formed in the chip. The first UBM layer is formed on each bonding pad. The first bump is formed in the first UBM layer. The first chemical etching process is performed to remove the first bump. The second etching process is performed to eliminate the first UBM layer. The second UBM layer is formed on each bonding pad. The second bump is formed on the second UBM layer. |
