| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of maximizing the surface of an electrode by etching the bird's beak portion of an isolation layer. CONSTITUTION: An isolation layer(12), a gate oxide layer, a gate electrode(13), and a spacer(13A) are sequentially formed at the upper portion of a semiconductor substrate(11). After sequentially forming a silicon nitride layer(14) and an interlayer dielectric(15) on the resultant structure, a mask pattern is formed on the predetermined portion of the resultant structure. Then, the interlayer dielectric and silicon nitride layer are sequentially etched by using the mask pattern. At this time, the bird's beak portion of the isolation layer is partially removed. Then, a storage node is formed on the resultant structure.
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