| 摘要 |
PURPOSE: A substrate treatment apparatus is provided to reduce the amount of usage of treatment liquid or a treatment gas, when a cleaning process and a drying process are performed on a semiconductor substrate. CONSTITUTION: Recesses(16,32) corresponding to each substrate(10) to be treated are simultaneously formed on the facing surfaces of upper and lower retention plates(14,30). O-rings(18,34) surrounding the recesses are formed. The substrate is sandwiched between the retention plates via the O-rings for pressing and retaining, thus demarcating each treatment region onto main surfaces(10a) of the substrate. Cleaning liquid is supplied to the recess(16) via a pipe(20) and a hole(16a) and is discharged from the recess(16) via the hole and a pipe(22), thus carrying out cleaning treatment to the treatment area of the main surface(10a), and conducting cleaning treatment to the treatment area of the main surface(10b) at the side of the recess(32) in the same manner. Instead of the cleaning liquid, demineralized water, an inert gas for drying such as N2, or gas plasma for cleaning or etching, or the like may be used.
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