| 摘要 |
PURPOSE: A method for fabricating a thin film transistor liquid crystal display device is provided to prevent the generation of undercut at a lower part of an edge of an etched photoresist film, thereby preventing the excessive reducing of data line width and the open reject of the data lines. CONSTITUTION: In a method for fabricating a thin film transistor liquid crystal display device, a photoresist film(4) on data lines(3) is etched by the partial etching of a half-tone mask carried out by an RIE(Reaction Ion Etching) mode etching step, wherein the RIE mode etching step is carried out under the conditions of a pressure of 300mTorr or less, an RF power of 500-1,500W, and an oxygen gas flow rate of 150-450sccm.
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