| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a polysilicon thin film transistor, in which the influence of impurities in a glass substrate can be prevented without wasting hydrogen fluoride solution. SOLUTION: In the manufacturing method for forming the polysilicon thin film transistor on a glass substrate 1, at least one film 2 out of an SiO2 and an amorphous silicon film 2 is formed on the surface, the back and the side surfaces of the glass substrate 1; thereby diffusion of impurities from the glass substrate 1 is prevented, in a wet etching process for eliminating an oxide film on a polysilicon thin film 3 surface.</p> |
