发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a non-contact, small and light fabricating equipment, to provide a method and equipment for fabricating a semiconductor device, which does not require big means and gentle in environment, specifically, a fabricating method and equipment which do not depend on a substrate size, i.e., wafer diameter, and further, a production line, as local field processing can be extended to any desired area by scanning, to solve the largest problem in convention on cost increase, to fabricate a high performance semiconductor device in high yield at low price. SOLUTION: The method for fabricating the semiconductor device includes at least a process of treating the substrate by generating radical at a small space between a rotor end and the substrate while a rotor end with rotational wing that circulates and evacuates gas of a local region is made to be an electrode and the rotor end is placed near the substrate and a second gas is circulated and evacuated.
申请公布号 JP2002353202(A) 申请公布日期 2002.12.06
申请号 JP20010159807 申请日期 2001.05.29
申请人 HITACHI LTD 发明人 KAWAMURA YOSHIO;KATAGIRI SOUICHI;SEYA HIDEKAZU;YAMAGUCHI TAKATADA;YASUI KAN
分类号 H01L21/285;H01L21/205;H01L21/302;H01L21/3065;H01L21/3205;H01L21/8242;H01L27/108 主分类号 H01L21/285
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