| 摘要 |
PROBLEM TO BE SOLVED: To provide a high reliability semiconductor light-emitting device having less change due to aging. SOLUTION: In the semiconductor light-emitting device, where a one conductivity-type semiconductor layer 2, an inverse conductivity-type semiconductor layer 3, and an inverse conductivity-type electrode 4 are successively formed on a substrate 1, a one conductivity-type electrode 5 is formed on the back side of the substrate 1, and further the inverse conductivity-type semiconductor layer 3 is composed by laminating at least a light-emitting layer 3a, having an atomic composition of (Ga1- XAlX)As and a cladding layer 3b which has an atomic composition of (Ga1- YAlY)As, the film thickness of the light-emitting layer 3a is set to 0.38 μm or less for prescribing to 0.15<=X<=0.3, 0.2<=Y<=0.3, Y/X<=1.18. |
