发明名称 CHARGED PARTICLE BEAM EXPOSURE SYSTEM, EXPOSING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a charged particle beam exposure system and an exposing method which can suppress productivity drop and rise in cost, when a foreign matters are sticking to a reticle. SOLUTION: In the charged particle beam exposure system comprising a charged particle beam source, an illumination optical system for irradiating a reticle with a charged particle beam from the charged particle beam source and a projection optical system for projecting a focused image of pattern formed to the reticle on a sensitive substrate, and a reticle-cleaning mechanism is further included for cleaning the reticle.</p>
申请公布号 JP2002353109(A) 申请公布日期 2002.12.06
申请号 JP20010156319 申请日期 2001.05.25
申请人 NIKON CORP 发明人 OKADA MASASHI
分类号 G03F7/22;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/22
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