MANUFACTURING METHOD OF FIELD EMISSION ELECTRON SOURCE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission electron source capable of improving insulating withstand voltages and providing longer service life. SOLUTION: This manufacturing method includes process of forming a polycrystalline silicon layer 3 on a n-type silicon substrate 1 which forms a conductive substrate, then forming a porous polycrystalline silicon layer 4 containing the grain and silicon crystalline of polycrystalline silicon, by making the polycrystalline silicon layer 3 porous in an anode oxide treatment process, and forming then a strong field drift layer 6 is formed by oxidizing the porous polycrystalline silicon layer 4 in an oxidizing process, and after that a surface electrode 7 is formed. Here the formation of a naturally oxidized film on the surface of the silicon crystallite is prevented by making the porous polycrystalline silicon layer 4 by not having it exposed to atmosphere for a specified time between the anode oxidizing treatment process and the oxidizing process.