| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of nonuniformity occurring in the thickness or composition ratio of element in a Pd-Ga compound layer and increases the contact resistance of an electrode, having an Au/Pd/Pd-Ga compound structure and used as the p-type electrode of a III nitride-based compound semiconductor element, when an electrode thermal treating step is performed in the course of forming the electrode, and in addition, the nonuniformity produces recessed and projecting sections on the surface of the electrode, causing peeling off, etc., and lowering the production yield of a III nitride-based compound semiconductor device, because no sufficient adhesive strength is obtained at mounting of the semiconductor element on a stem or wiring bonding is made to an electrode portion. SOLUTION: An Mo layer is interposed between Au and Pd, constituting the p-type electrode. The Mo layer has the effect of uniformly forming a Pd-Ga compound to be formed between a III nitride-based compound semiconductor layer which constitutes a base and a Pd layer.
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