SENSE AMP CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A sense amp circuit of a semiconductor memory device is provided, which can sense and amplify a level of a potential developed signal efficiently even though there is a mismatch of transistors and has a good sensing margin. CONSTITUTION: According to a sense amp circuit of a semiconductor memory device, the first and the second output node(ON1,ON2) output a sense-amplified signal, and a latch to which the first and the second inverter are cross-connected is connected between the first and the second output node. The first and the second input transistor are connected to a drain of a NMOS transistor in the first and the second inverter through their drains and input signals of a bit line and a complementary bit line through their gates. A driving transistor is connected between one node of the first and the second input transistors and a ground, and pulls down a potential of the above one side node to a ground level by being inputted by the activation of a control signal. And a voltage controlled transistor is connected between the drain and a source of the NMOS transistor in the first and the second inverter, and maintains the voltages of the drain and the source of the NMOS transistor in the first and the second inverter as the same level.