发明名称 ETCHANT COMPOSITION FOR ETCHING BOTH ALUMINIUM AND ITO
摘要 PURPOSE: An etchant composition is provided which is capable of etching both aluminium and ITO (indium-tin-oxide) by adjusting oxalic acid based mixed acid and hydrochloric acid based mixed acid so that the mixed acids have an appropriate pH. CONSTITUTION: The etchant composition for etching both aluminium and ITO comprises an acid capable of adjusting pH of oxalic acid and a composition to 3 to 4.5, wherein the acid capable of adjusting pH to 3 to 4.5 is one mixture selected from an acid mixture comprising salts of fluorine, ferric chloride (FeCl3) and hydrochloric acid, an acid mixture comprising nitric acid, HClO4 and acetic acid, and an acid mixture comprising phosphoric acid as first constituent and any one acid of acetic acid or nitric acid as second constituent, and the composition is for forming an aluminum alloy gate for LCD (liquid crystal display) and an ITO transparent electrode. The etchant composition for etching both aluminium and ITO comprises an acid capable of adjusting pH of hydrochloric acid and a composition to 0.5 to 2, wherein the acid capable of adjusting pH to 0.5 to 2 is an acid mixture comprising phosphoric acid and nitric acid, HClO4, an acid mixture of nitric acid and HClO4, salts of fluorine, or ferric chloride (FeCl3), and an acid mixture comprising phosphoric acid as first constituent and any one acid of acetic acid or nitric acid as second constituent, and the composition is for forming an aluminum alloy gate for LCD (liquid crystal display) and an ITO transparent electrode.
申请公布号 KR20020091485(A) 申请公布日期 2002.12.06
申请号 KR20010030192 申请日期 2001.05.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, HO MIN;LEE, SU WON;LIM, DAE HYEON
分类号 C23F1/20;(IPC1-7):C23F1/20 主分类号 C23F1/20
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