发明名称 PLASMA MONITORING EQUIPMENT AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma monitoring equipment and method in a highly reliable semiconductor device, in which cost is reduced by reducing the storage volume of a data storage equipment and malfunction caused by the effect of noise of a high frequency power source or the like is reduced. SOLUTION: The system comprises a data acquisition initiation level judgment part 11 connected to a measurement part 9 that measures plasma impedance, in which the judgment part 11 judges the level of the measured data whether satisfies or not a fixed stored acquisition level and judges the initiation of the storage of the measured data based on the result of the judgment, and an acquisition end level judgment part 12 that judges the measured data whether satisfies or not a fixed storage end level and judges the end of the storage of the measured data based on the result of the judgment. Thus the system constitution is minimized so that only data at plasma generation is stored without inputting signal from a plasma generation power controller 4.
申请公布号 JP2002353201(A) 申请公布日期 2002.12.06
申请号 JP20010159006 申请日期 2001.05.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TERANISHI MASATOSHI;SUMITA KENJI;AMANO SHIYUUSHIN
分类号 H05H1/00;C23C16/505;C23C16/52;G02F1/13;G02F1/1333;H01L21/205;H01L21/302;H01L21/3065;H05H1/46 主分类号 H05H1/00
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