| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, when dry etching is performed on a substrate by means of a dry etching apparatus, an unstable etching period is generated and the device is not able to perform stable dry etching on the substrate, because a plasma becomes unstable when the plasma is generated. SOLUTION: The occurrence of the unstable etching period is avoided by generating the plasma by supplying a gas that does not contribute to etching to a reaction chamber 1 and, after the plasma is stabilized, replacing the gas with a gas used for etching through gas replacement. |
