发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device for manufacturing a fine pattern having higher size accuracy, using a stencil mask. SOLUTION: An input layout data is sorted to rectangular shapes of different pattern widths, a boundary for dividing peripheral part or internal part is generated for each sorted figure, an input pattern is formed into a fine pattern at the boundary and a complementary mask, shared to form fine patterns in both sides of the boundary is used as different layers, in order to form a pattern.</p>
申请公布号 JP2002353102(A) 申请公布日期 2002.12.06
申请号 JP20010153351 申请日期 2001.05.23
申请人 HITACHI LTD 发明人 SHIGENIWA AKIYOSHI;FUKUDA HIROSHI;MURAI FUMIO
分类号 G03F1/20;G03F1/30;H01L21/027;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L23/52;H01L23/522;H01L29/78;(IPC1-7):H01L21/027;G03F1/16;H01L21/320 主分类号 G03F1/20
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