发明名称 SEMICONDUCTOR CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor circuit that has an excellent switching characteristic at switching of a voltage level of a signal with a small circuit area. SOLUTION: An Nch-transistor (TR) 14 whose gate is connected to an input terminal 11 and an Nch-TR 16 whose gate is connected to an output signal voltage application terminal via a Pch-TR 18 are connected to an output terminal 12 providing an output signal OUT with a 2nd voltage level, when the output signal OUT changes from a high level into a low level depending on a change in the input signal IN with the 1st voltage level, first the Nch-TRs 14, 16 are conductive to lower the voltage of the output signal OUT and further the Nch-TR 16 is brought into a stronger ON state (a state with a high drive capability) to bring the voltage of the output signal OUT to a low level thereby quickly changing the output signal OUT with a simple circuit configuration.
申请公布号 JP2002353805(A) 申请公布日期 2002.12.06
申请号 JP20010162987 申请日期 2001.05.30
申请人 FUJITSU LTD 发明人 MOTAI HIROSHI;YAJIMA MIKIKO
分类号 H01L27/04;G11C5/14;H01L21/822;H01L21/8238;H01L27/092;H03K19/017;H03K19/0175;H03K19/0185;(IPC1-7):H03K19/018;H01L21/823 主分类号 H01L27/04
代理机构 代理人
主权项
地址