SEMICONDUCTOR LIGHT-EMITTING DIODE ON CUTOFF BASE MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting diode on a cutoff substrate. SOLUTION: Light is emitted from an active layer of a multi-quantum well structure and the active layer is coated in a sandwiched form with two upper and lower layers of InGaAlP of an upper clad layer. The light emission efficiency of the active layer is increased by a light beam which increases in a light-emitting diode and an electron reflecting layer. An epitaxial layer of InGaAlP is grown by OMVPE on a GaAs substrate at a tilt angle of <111>A, and the quality of the epitaxial layer and the flatness and light emission efficiency of the top surface of the epitaxial layer are improved; and the cutoff base material and the clad layer close to the base material of the lower layer have the same electrical properties. A conductive light-beam transmission layer of the 2nd kind is present as a current diffusion layer on the top surface of the clad layer of a high layer. This one layer is made to diffuse a current and the emitted light beam. This light-beam transmission layer includes a barrier layer, a grating gradient layer, and a window layer whose energy level is transparent to the incident light beam.