发明名称 INTELLIGENT POWER SWITCH UNIT
摘要 PROBLEM TO BE SOLVED: To make compact in size a control substrate in an intelligent power switch unit, having a control circuit for imparting a signal for turning on and off of switching element. SOLUTION: A drain D of a MOSFET 190 is connected to a first lead frame 150 connected to an input terminal 170, and the MOSFET 190 is fixed. A source S of the MOSFET 190 is connected to a second lead frame 160, connected to an output terminal 180 via a bonding wire 191. The control substrate 110 mounts a control IC 120 for controlling a switching operation or the like and is connected to a terminal 130 for inputting or outputting various type signals. The substrate 110 imparts an on/off signal to the gate G of the MOSFET 190. Base ends of the substrate 110 and the frame 150 are resin-sealed by a resin mold 400.
申请公布号 JP2002353404(A) 申请公布日期 2002.12.06
申请号 JP20010152537 申请日期 2001.05.22
申请人 TAIHEIYO SEIKO KK 发明人 IWATA TOSHINORI;OTA MANABU
分类号 H01L25/07;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L25/07
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