| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device where irregularities of the characteristics are reduced, and stable yield can be obtained. SOLUTION: A field oxide film 3 is formed on a surface of an N<-> type active layer 2. The field oxide film 3 in a part, where an N<+> type source region of high concentration and an N<+> type drain region of high concentration are formed, is eliminated by a photolithographic process and an etching process, and aperture parts 4a, 4b are formed. In this case, a plurality of mask patterns of the photolithographic process are prepared. A mask pattern, whose drift length Ld is short is used for each wafer of one lot where the average value of thickness of active layers 1c, is at least a specified value. A mask pattern, whose drift length Ld is long is used for each wafer of one lot where the average value of thickness of the active layers 1c is less than the specified value.
|
