METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the film forming properties, cost performance and workability of an organic SOG interlayer insulation film for forming a semiconductor device. SOLUTION: A material mainly containing an organic Si compound R<1> x Si(OR<2> )4-x (where R<1> is a phenyl or a vinyl group, R<2> is an alkyl group, and x is an integer of 1-3.) is plasma polymerized or reacted with an oxidizer to form an organic-containing Si oxide interlayer insulation film. The organic Si compound with R<1> of a phenyl group may be phenyltrimethoxysilane or diphenyldimethoxysilane and that with R<1> of a vinyl group be vinyltrimethoxysilane or divinyldimethoxysilane.