METHOD FOR FORMING THIN FILM AND METHOD FOR FABRICATING THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor having enhanced characteristics. SOLUTION: When an amorphous silicon thin film is irradiated with a laser beam and crystallized, the substrate is warped upward in order to reduce residual stress in the silicon film which is then used as a semiconductor layer thus fabricating a thin film transistor having enhanced characteristics.