| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a thin film semiconductor element having high stability and reliability by removing contaminants between steps in the next step thereby preventing variation in the characteristics of a transistor. SOLUTION: In the method for fabricating a thin film semiconductor element having a silicon semiconductor film and a silicon oxicide film of specified shape, an amorphous silicon semiconductor film 3 is formed on a substrate 1, a silicon oxicide film 4 is formed on the surface of the silicon semiconductor film 3, a silicon nitride film 6 is formed on the silicon oxicide film 4, the silicon nitride film 6 is removed, and then the silicon semiconductor film 3 is crystallized. Since adhering contaminants can be prevented from being diffused and removed effectively, characteristics of the thin film semiconductor element can be prevented from deteriorating resulting in a thin film semiconductor element having good performance.
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