| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser that can facilitates position adjustment of a characteristic measuring needle, and at the same time, the needle to make stable measurement by suppressing the increase of its parasitic capacitance, as much as possible. SOLUTION: This semiconductor laser comprises an n-type GaAs substrate 102, a ridge section 112 formed on the substrate 103 into a laminated state, and flat sections 115 and 116 formed on the substrate 102 on both sides of the ridge section 112 through grooves 113 and 114, respectively. This laser also comprise an upper-surface electrode 117 connected to a p-type GaAs contact layer 108a through an electrode contacting hole 109, and a lower-surface electrode 118 formed on the lower surface of the substrate 102. The ridge section 112 has two projecting sections 119 and 120 which are located at mutually deviated positions.
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