发明名称 METHOD AND APPARATUS FOR REMOVING CONDUCTIVE FILM FROM SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To efficiently separate and remove a conductive film (Ru film) adhering to the rear surface, bevel section, etc., of a semiconductor substrate in a short time. SOLUTION: A conductive film formed on a semiconductor substrate is dissolved in an electrolytic solution by anodically oxidizing the film by arranging counter electrodes against the conductive film at a prescribed interval and, after filling up the space between the film and counter electrode with the electrolytic solution, applying a voltage across the film and electrode by using the electrode as a cathode. In this way, a conductive thin film made of Ru, TiN, W, etc., can be separated and removed. When the conductive film to be removed is an Ru film, it is preferable to use an acidic aqueous solution, such as the hydrochloric acid, nitric acid, sulfuric acid, perchloric acid, etc., or the aqueous solution of a salt, such as the sodium chloride, etc., as the electrolytic solution and to apply a voltage of >=1.1 V between the counter electrodes.
申请公布号 JP2002353191(A) 申请公布日期 2002.12.06
申请号 JP20010152719 申请日期 2001.05.22
申请人 TOSHIBA CORP 发明人 SATO MOTOYUKI;TOMITA HIROSHI;MATSUI YOSHITAKA;NADAHARA SOICHI
分类号 B23H9/00;C25F5/00;C25F7/00;H01L21/28;H01L21/285;H01L21/306;(IPC1-7):H01L21/306 主分类号 B23H9/00
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