| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and equipment for fabricating semiconductor device, by which a high dielectric film such as BST film or ST film that is excellent in film forming properties, such as electrical properties is made. SOLUTION: The equipment has a boat 23 holding a plurality of wafers 22 lined up in a reaction chamber 10 at a fixed intervals in a direction perpendicular to the wafer surfaces, an oxidation gas introduction nozzle 32 located almost parallel to the array direction of the wafers 22 to form a layered oxidation gas flow in the vicinity of each surface of the wafers 22 and a dispersion nozzle 30 located almost parallel to the direction of the array of the wafers 22 to form a layered source gas flow in the vicinity of each surface of the wafers 22.
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