| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor which enables a reduction of leakage current in the off-state in a thin film transistor. SOLUTION: A source/drain electrode 107 is formed by performing a first P ion implantation with the resist 106 covering an upper part of a polysilicon thin film 103 including a gate electrode region 105 so that the impurity is implanted only to a region to be the source/drain electrode region 107. Then, a first LDD 108 is formed by a second P ion implantation after recessing the pattern edge of resist 106 by 0.5 micron by ashing, and a second LDD 109 is formed by a P ion implantation after recessing the resist pattern edge by 0.5 micron. Furthermore, a third LDD 110 is formed by P ion implantation after the removal of resist 106.
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