| 摘要 |
PROBLEM TO BE SOLVED: To provide a lateral MOSFET and a production method therefor, with which costs can be reduced and time for delivery can be shortened. SOLUTION: On the main surface side of a semiconductor layer 3 composed of a p-type silicon layer on an insulation layer 2, ion implantation is conducted for controlling a threshold voltage (Figure 1 (a)). Afterwards, a gate oxide film 8 is formed on the main surface side of the semiconductor layer 3, a polysilicon film is deposited on the gate oxide film 8, and a patterned gate electrode 9 is formed by utilizing a mask (Figure 1 (b)). A mask member 41 composed of a resist layer is formed on the main surface side of the semiconductor layer 3 by utilizing the mask, and the ion implantation of impurities for forming an n-type semiconductor region 12 (refer to Figure 1 (d)) on one terminal side of the gate electrode 8 in the direction of gate length is performed by utilizing the gate electrode 9 as one part of the mask member (Figure 1 (c)). Such impurities are diffused, and the n-type semiconductor region 12 is formed with depth to the insulating layer 2 (Figure 1 (d)).
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