| 摘要 |
PROBLEM TO BE SOLVED: To improve the yield of a semiconductor device in manufacturing the semiconductor device, in which the dry cleaning of an etching equipment is carried out. SOLUTION: A titanium wafer is carried in the upper chamber 101 of the etching equipment when dry cleaning of the etching equipment is carried out or after that is carried out. After the dry cleaning, argon plasma is generated in the upper surface side of the titanium wafer in the chamber while high frequency is applied in the lower surface side of the titanium wafer. The surface of the titanium wafer is activated by argon plasma and unnecessary gas remaining in the chamber is adsorbed on the titanium wafer, thus the chamber can be further vacuumized in a short time.
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