| 摘要 |
PROBLEM TO BE SOLVED: To simulate a charged particle lithography with high accuracy and at a high speed. SOLUTION: A method for simulating charged particle lithography comprises the step of calculating a storage energy stored in a resist film, when charged particles are incident via a resist film provided on a substrate, a step of providing a region in which the particles are scattered as a calculating region for calculating scattering, a step of dividing the calculating region into a plurality of first regions, a step of calculating the storage energy stored in each region when a predetermined number of the charged particles are sequentially incident from a predetermined incident point, a step of dividing the calculating region into a plurality of second regions as re-observed from the plurality of the first regions, based on a distribution of the energy, and a step of further calculating the energy stored in each of the plurality of the regions, when a predetermined number of the particles are sequentially incident from the predetermined incident point.
|
