METHOD FOR PRODUCING EPITAXIAL WAFER AND EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an epitaxial wafer, and an epitaxial wafer, having an extremely high gettering capacity in which LPD does not increase even if doped quantity of nitrogen is increased and crystal defect in an epitaxial layer is reduced extremely. SOLUTION: A silicon wafer sliced from a single crystal silicon ingot grown by a pull-up method is subjected to hydrochloric acid oxidation in an atmosphere of oxidizing gas mixed with a gas containing chlorine and then epitaxial growth is started.