发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
PURPOSE: To obtain a semiconductor storage device which has improved tolerance for soft errors. CONSTITUTION: PMOS transistors P1 and P2, which constitute an SRAM memory cell have their gate insulating films formed by using high dielectric materials. Consequently, storage nodes NA and NB are increased in capacity for reducing the probability of the occurrence of soft errors.
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申请公布号 |
KR20020091771(A) |
申请公布日期 |
2002.12.06 |
申请号 |
KR20020023337 |
申请日期 |
2002.04.29 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
IGARASHI MOTOSHIGE;NII KOJI |
分类号 |
H01L27/11;G11C11/412;H01L21/8242;H01L21/8244;H01L27/108;(IPC1-7):H01L27/11 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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