| 摘要 |
PROBLEM TO BE SOLVED: To enable surface mount, realize miniaturization and weight reduction, and prevent increase of package resistance and deterioration of heat dissipating property, by collecting electrodes on one side of a semiconductor substrate of a power semiconductor element. SOLUTION: Three electrodes (a gate electrode 21a connected with a trench gate electrode 17, a source electrode 20 being in contact with an N<+> source region 14 and a P base layer 12, and a drain electrode 22 being in contact with an N<+> drain layer 10) are arranged on one side of semiconductor substrates 10, 11 of a U-MOSFET. |
