| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film semiconductor element of superior reliability and characteristics and its manufacturing method by using a gate insulating film, which prevents deterioration of the reliability of the thin film semiconductor element due to oxide formation of tungsten and deterioration of characteristic due to gate insulating film quality. SOLUTION: The thin film semiconductor element is provided with a silicon semiconductor film 2 having a prescribed form, a first gate insulating film 3 having a prescribed form, a second gate insulating film 4 having a prescribed form, and a gate electrode film 5; the first gate insulating film 3 is a silicon oxide film, where an absolute value of film stress is at most 300 MPa; the second gate insulating film 4 is a silicon oxinitride film; and the gate electrode film 5 is formed of alloy of molybdenum and tungsten.
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