| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method of shrinking the grain size of tungsten silicide, which can shrink the grain size of tungsten silicide, a multilayer structure of tungsten silicide, and a two-layer structure of tungsten-silicide crystalline grains. SOLUTION: This multilayer structure of tungsten silicide is constituted by forming a first tungsten-silicide layer on a semiconductor substrate, a first intermediate layer on the first tungsten-silicide layer, and a second tungsten- silicide layer on the first intermediate layer.
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