| 摘要 |
PROBLEM TO BE SOLVED: To rapidly raise the temperatures in a reaction envelope, up to a process temperature to stabilize after a wafer is conveyed into the reaction envelope, and decrease an operator's load imposed for adjustment of control in raising temperatures, when a semiconductor wafer disposed in the reaction envelope is heated by a heater provided outside the reaction envelope, and a treatment gas is supplied to the reaction envelope for thermal treatment. SOLUTION: There are provided a first operation part, in which the internal temperature in a reaction envelope and an external temperature as a temperature of a heater are interpolated at a predetermined mixed ratio, and an output value is obtained corresponding a differential component between its interpolation value and a temperature-setting value; and a second operation part as a cascade control part, in which the internal temperature is fetched by a major loop and the external temperature is fetched by a negative loop. In the temperature increase step, first, an output value of the first operation part is used, and the ratio is increased gradually by interpolating the output value of the second operation part in the midway, and finally, the output value of the second operation part is used at 100%.
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