| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for avoiding malfunction caused by the occurrence of etching residue, and to provide its manufacturing method. SOLUTION: After having formed a lead electrode 3 on a semiconductor substrate, an interlayer dielectric 5 is deposited on the substrate and planarized. Then, holes 6a, 6b are formed in the interlayer dielectric 5, and after having formed a barrier metal layer 7 on a wall surface of the holes 6a, 6b, a conductive plug 8 is buried in the holes 6a, 6b. Subsequently, a lower electrode, an upper electrode facing the lower electrode, and a dielectric film for forming capacitance to intervene between the lower electrode and the upper electrode are sequentially formed on the substrate. By covering a step that is caused between the lower lead electrode 3 and the substrate with the interlayer dielectric 5, when a conductive film for the lower electrode is deposited on the substrate and patterned by etching, there is not the fear that etching residue at the step caused by a conventional manufacturing method may be caused.
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