MIS FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a MIS field effect transistor having a gate electrode of a low-melting point metal and metal source/drawn region and its manufacturing method. SOLUTION: MIS field transistor in which a trench element isolation region 3 is formed by burying an oxide film both on a p type silicon substrate 1 and inside and a gate electrode 9 having a barrier metal 8 at both sides and bottom face is formed on the p type silicon substrate via a gate oxide film 6 and a barrier metal 7. A spacer 10 is formed at sidewall of the gate electrode and the trench element isolation region. n type and n<+> type source/drain region (4, 5) is formed self-aligned with the gate electrode and the spacer. A source/ drain region 12 having a barrier metal 11 on both the sidewall and a bottom face is formed on the n<+> source/drain regions between spacers. A convex protrusion 14 formed on the gate electrode and a part of metal source/drain region is planarized by a thin insulation film 13. A conductive plug 15 having a barrier metal at sidewall is formed directly on the convex protrusion and the conductive plug is buried flatly by a interlayer insulation film 17 and a wiring body 19 is connected to the conductive plug.