| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistor where increase rate of resistance is low even by a low temperature annealing after dopant activation heat treatment and that has high resistance. SOLUTION: The resistor, where each of 13 group element ions and 15 group element ions is doped with 1E20 (1/cm<3> ) or more in a silicon film, is characterized in that resistivity of the resistor is more than 1.5E-3 (Ωcm), and the increase rate of the value of resistance of the resistor, before and after of the additional heat-treatment when a low-temperature additional heat-treatment is performed at 500-800 deg.C after the resistor is subjected to a high-temperature heat-treatment at 800-1100 deg.C, is equal to or less than 5%. Because this compensation polysilicon resistor has high resistance and a little fluctuation of the value of resistance for fluctuation of thermal budget, it is very effective as a resistor in an analog circuit.
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