| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser structure by which a wavelength is made tunable over a wide wavelength range, and which can be manufactured easily. SOLUTION: The integrated laser structure comprises a first segment (1), a second segment (3) and a third segment (4) on a substrate composed of a semiconductor material; the first segment (2) amplifies light waves resonating in the laser structure, and it provides a filter for a low-selectivity interferometer; the second segment (3) continuously fine tunes and phase-adjusts the light waves; the third segment (4) provides reflection of the light waves in a wavelength selection manner. Respective segments are constituted, in such a way that a current is injected, where the current into the first segment (2) causes the wavelength shift of the low-selective interferometric filter, where the current into the second segment (3) causes the wavelength shift of a resonator mode, and where the current into the third segment (4) causes wavelength shift of the reflection of the wavelength selective reflection.
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