| 摘要 |
PURPOSE: A DDP(Dual Die Package) type semiconductor chip package is provided to reduce thickness and size of the semiconductor package by using one lead frame. CONSTITUTION: The first bonding pad is formed on the first active face of the first semiconductor chip(11). The second bonding pad is formed on an edge of the second active face of the second semiconductor(13). The first semiconductor chip(11) and the second semiconductor chip(13) are mounted on an inner lead(21). The inner lead(21) and an outer lead are formed on a single LOC(Lead On Chip) type lead frame. A tip step portion is formed at an end portion of the inner lead(21). A non-conductive adhesion portion(41) is formed on a lower face of the inner lead(21) of the first semiconductor chip(11). A non-conductive adhesion portion is formed on an upper face of the inner lead(21) of the second semiconductor chip(13). The bonding pad of the first semiconductor chip(11) is connected with the tip step portion of the inner lead(21) by the first bonding wire. The bonding pad of the second semiconductor chip(13) is connected with an upper face of the inner lead(21) by the second bonding wire(33). The first and the second semiconductor chips(11,13), the inner lead(21), the first boding wire, and the second boding wire(33) are protected by a package body(51). |
