发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To prevent the increase of cell area as possible and allow fast operation. SOLUTION: The semiconductor memory comprises a memory cell 10 having a data storage unit 20 for storing data, and a transfer gate unit having a first conductive MOSFT 12 for writing and reading data in and from the data storage unit, and an electric potential is applied in accordance with data which is stored in the data storage unit as board bias of the MOSFET. |
申请公布号 |
JP2002353340(A) |
申请公布日期 |
2002.12.06 |
申请号 |
JP20010159944 |
申请日期 |
2001.05.29 |
申请人 |
TOSHIBA CORP |
发明人 |
KOBAYASHI HIROYUKI;HAMADA MOTOTSUGU |
分类号 |
G11C11/412;H01L21/8238;H01L21/8244;H01L27/08;H01L27/092;H01L27/11;H01L29/786 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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